APT1201R4SFLL datasheet(2/4 Pages) ADPOW

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DYNAMIC CHARACTERISTICS

APT1201R4BFLL_SFLL

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

0.45

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

0.1

0.02

0.05

0.2

D=0.5

0.01

SINGLE PULSE

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMALCHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID 9A)

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID 9A, di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID 9A, di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID 9A, di/dt = 100A/µs)

Symbol

ISM

VSD

dv/dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

MIN

TYP

MAX

1.3

Tj = 25°C

210

Tj = 125°C

710

Tj = 25°C

.07

Tj = 125°C

2.0

Tj = 25°C

Tj = 125°C

Symbol

RθJC

RθJA

MIN

TYP

MAX

0.42

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 29.9mH, RG = 25Ω, Peak IL = 9A

5 dv

/dt numbers reflect the limitations of the test circuit rather than the

device itself. I

S ≤ -ID9A

di/dt ≤ 700A/µs V

R ≤ 1200

J ≤ 150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

iss

oss

rss

d(on)

d(off)

Test Conditions

GS = 0V

DS = 25V

f = 1 MHz

GS = 10V

DD = 600V

D = 9A @ 25°C

GS = 15V

DD = 600V

D = 9A @ 25°C

G = 1.6Ω

MIN

TYP

MAX

2030

2500

309

472

120

816

510

UNIT

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

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