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APT75GT120JR Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT75GT120JR Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page ![]() APT75GT120JR TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. Symbol V CES V GE I C1 I C2 I CM SSOA P D T J,TSTG T L APT75GT120JR 1200 ±30 97 42 225 225A @ 1200V 481 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 @ T C = 150°C Switching Safe Operating Area @ T J = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. ® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated Thunderbolt IGBT® G C E SO T-2 27 ISOTOP® file # E145592 "UL Recognized" G E E C 1200V APT75GT120JR STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (V GE = 0V, I C = 4mA) Gate Threshold Voltage (V CE = VGE, I C = 3mA, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 75A, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 75A, Tj = 125°C) Collector Cut-off Current (V CE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (V CE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (V GE = ±20V) Intergrated Gate Resistor Symbol V (BR)CES V GE(TH) V CE(ON) I CES I GES R G(int) Units Volts µA nA Ω APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 1200 4.5 5.5 6.5 2.7 3.2 3.7 3.9 25 TBD 480 5 |
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