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APTGF50X60P2 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGF50X60P2 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 4 page  APTGF50X60E2 APTGF50X60P2 APT website – http://www.advancedpower.com 2 - 4 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 600 V Tj = 25°C 1 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.95 2.45 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 50A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1mA 3 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 2200 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 200 pF Td(on) Turn-on Delay Time 40 Tr Rise Time 9 Td(off) Turn-off Delay Time 120 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 2.7Ω 12 ns Td(on) Turn-on Delay Time 42 Tr Rise Time 10 Td(off) Turn-off Delay Time 130 Tf Fall Time 21 ns Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 50A RG = 2.7Ω 1.0 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 50A VGE = 0V Tj = 125°C 1.2 V ER Reverse Recovery Energy IF = 50A VR = 300V di/dt =800A/µs Tj = 125°C 1.5 mJ Tj = 25°C 3.4 Qrr Reverse Recovery Charge IF = 50A VR = 300V di/dt =800A/µs Tj = 125°C 5.6 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.5 RthJC Junction to Case Diode 0.8 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 °C Torque Mounting torque To Heatsink M5 2 3.5 N.m Wt Package Weight 185 g |
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