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MS652 Datasheet(PDF) 2 Page - Advanced Power Technology |
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MS652 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 4 page ![]() MS652.PDF 12-04-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Page 2 MS652/MS652S RF & MICROWAVE TRANSISTORS STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) MS652S Symbol Test Conditions Min. Typ. Max. Units BVCES IC = 25 mA VBE = 0 36 V BVCEO IC = 50 mA IB = 0 16 V BVCBO IC = 25 mA IE = 0 36 V BVEBO IE = 5 mA IC = 0 4.0 V ICES VCE =15 V VBE = 0 1.0 mA hFE VCE = 5 V IC = 200 mA 10 150 DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) MS652S Symbol Test Conditions Min. Typ. Max. Units POUT f = 512 MHz VCC = 12.5 V 5 W GP f = 512 MHz VCC = 12.5 V 10 dB ηη f = 512 MHz VCC = 12.5 V POUT = 5 W 60 % COB f = 1 MHz VCB = 15 V 15 pF LARGE SIGNAL IMPEDANCE DATA Frequency MHz ZIN ZCL Units 400 1.2 + j0.6 6.5 + j6.5 Ω 440 1.2 + j0.9 7.2 + j6.0 Ω 470 1.2 + j1.2 7.7 + j5.3 Ω 512 1.2 + j1.5 8.3 + j4.5 Ω Conditions Vcc = 12.5V, Pout = 5W |
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