140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1007

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS1007 is a 50V epitaxial silicon NPN planar transistor

designed primarily for SSB communications. This device

utilizes emitter ballasting to achieve extreme ruggedness

under severe operating conditions.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

110

V

Collector-Emitter Voltage

55

V

Emitter-Base Voltage

4.0

V

Device Current

10

A

Power Dissipation

233

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

0.75

°°C/W

Features

Features

• 30 MHz

• 50 VOLTS

• P

• G

• COMMON EMITTER CONFIGURATION