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MS2341

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

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DESCRIPTION:

DESCRIPTION:

The MS2341 is a gold metallized silicon, NPN power transistor

designed for applications requiring high peak power and low duty

cycles such as IFF, DME, and TACAN. The MS2341 utilizes internal

impedance matching for improved broadband performance.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

2.6

A

Power Dissipation

87.5

W

Junction Temperature

200

Storage Temperature

-65 to +150

Thermal Data

Thermal Data

Junction-case Thermal Resistance

2.0

°°C/W

Features

Features

• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND

TACAN APPLICATIONS

• 40 W (typ.) IFF 1030–1090 MHz

• 35 W (min.) DME 1025–1150 MHz

• 25 W (typ.) TACAN 960–1215 MHz

• 960 - 1215 MHz

• GOLD METALLIZATION

• Pout = 25 W MINIMUM

• Gp = 9.0 dB

• INTERNAL INPUT MATCHING

• INFINITE VSWR CAPABILITY @ RATED CONDITIONS

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS