DDTCxxxxLP (R1

R2 Series)

Document number: DS30755 Rev. 8 - 2

2 of 8

www.diodes.com

January 2016

© Diodes Incorporated

DDTCxxxxLP (R1

R2 Series)

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

P/N

Symbol

Value

Unit

Supply Voltage

VCC

50

V

Input Voltage

DDTC123JLP

VIN

-5 to +12

V

DDTC143ZLP

-5 to +30

DDTC114YLP

-5 to +40

Output Voltage

DDTC123JLP

IO

100

mA

DDTC143ZLP

100

DDTC114YLP

70

Maximum Collector Current

IC(MAX)

100

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

250

mW

Power Deration above +25°C

Pder

2

mW/

C

Thermal Resistance, Junction to Ambient Air (Note 5)

RJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

P/N

Symbol

Min

Typ

Max

Unit

Test Condition

Off Characteristics (Note 6)

Collector-Base Breakdown Voltage

BVCBO

50





V

IC = 50µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 7)

BVCEO

50





V

IC = 2mA, IB = 0

Emitter-Base Breakdown Voltage (Note 7)

BVEBO

4.5





V

IE = 50µA, IC = 0

Collector Cutoff Current (Note 7)

ICEX





0.5

µA

VCE = 50V, VEB(OFF) = 3.0V

Base Cutoff Current (IBEX)

IBL





0.5

µA

VCE = 50V, VEB(OFF) = 3.0V

Collector-Base Cut Off Current

ICBO





0.5

µA

VCB = 50V, IE = 0

Collector-Emitter Cut Off Current, IO(OFF)

ICEO





0.5

µA

VCE = 50V, IB = 0

Emitter-Base Cut Off Current

IEBO





0.5

mA

VEB = 5V, IC = 0

Input-Off Voltage

VI(OFF)

0.5





V

VCE = 5V, IC = 100µA

On Characteristics (Note 6)

Base-Emitter Turn-On Voltage (Note 7)

DDTC123JLP

VBE(ON)





0.85

V

VCE = 5V, IC = 2mA

DDTC143ZLP





0.85

DDTC114YLP





0.95

Base-Emitter Saturation Voltage (Note

7)

DDTC123JLP

VBE(SAT)





0.98

V

IC = 10mA, IB = 1mA

DDTC143ZLP





0.998

DDTC114YLP





0.98

Input-On Voltage

VI(ON)





1.1

V

VO = 0.3V, IC = 5mA

Input Current

DDTC123JLP

II





7.2

mA

VI = 5V

DDTC143ZLP





1.5

DDTC114YLP





7.2

DC Current Gain

hFE

50







VCE = 5V, IC = 1mA

70







VCE = 5V, IC = 2mA

125







VCE = 5V, IC = 5mA

150







VCE = 5V, IC = 10mA

180







VCE = 5V, IC = 50mA

Collector-Emitter Saturation Voltage

VCE(SAT)





0.15

V

IC = 10mA, IB = 1mA





0.2

V

IC = 50mA, IB = 5mA

Output On Voltage (Same as VCE(SAT))

VO(ON)





0.3

IJ = 2.5mA, IO = 50mA

Input Resistor +/-30%

R1

-30



30

%



Resistor Ratio

 (R2/R1)

-20



-20

%



Small Signal Characteristics

Transition Frequency (gain bandwidth product)

fT



250



MHz

VCE = 10V, IE = 5mA, f = 100MHz

Notes:

5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

7. Guaranteed by design.