GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

23A017

1.7 Watts, 20 Volts, Class A

Linear to 2300 MHz

GENERAL DESCRIPTION

The 23A017 is a COMMON EMITTER transistor capable of providing 1.7

Watts of Class A, RF output power to 2300 MHz. This transistor is

specifically designed for general Class A amplifier applications. It utilizes

gold metalization and diffused ballasting to provide high reliability and

supreme ruggedness. The transistor uses a fully hermetic High Temperature

Solder Sealed package.

CASE OUTLINE

55BT, STYLE 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

6.0 Watts

o

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

50 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

800 mA

Maximum Temperatures

Storage Temperature

- 65 to + 200 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

Ft

VSWR

Power Out

Power Input

Power Gain

Transition Frequency

Load Mismatch Tolerance

F = 2.3 GHz

Ic = 280 mA

Vcc = 20 Volts

Vce = 20V, Ic =280 mA

1.7

6.25

3.4

2.2

7.6

3.7

.38

9:1

Watts

Watts

dB

GHz

BVebo

BVces

BVceo

h

FE

Cob

Emitter to Base Breakdown

Collector to Emitter Breakdown

Collector to Emitter Breakdown

DC Current Gain

Capacitance

Thermal Resistance

Ie = 2 mA

Ic = 20 mA

Ic = 20 mA

Vce = 5 V, Ic = 200 mA

Vcb = 28V, f = 1 MHz

3.5

50

22

20

4.8

14

16

Volts

Volts

Volts

pF

C/W

o

Initial Issue June, 1994