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MMDT3906VC Datasheet(PDF) 2 Page - Diodes Incorporated

Part # MMDT3906VC
Description  DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMDT3906VC Datasheet(HTML) 2 Page - Diodes Incorporated

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DS30640 Rev. 3 - 2
2 of 4
MMDT3906VC
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
V
IC = -10
µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10
µA, IC = 0
Collector Cutoff Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
Base Cutoff Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
hFE
60
80
100
60
30
300
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
k
Ω
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
3.0
60
µS
Current Gain-Bandwidth Product
fT
250
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = -5.0V, IC = -100
µA,
RS = 1.0k
Ω, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
tr
35
ns
Storage Time
ts
225
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
tf
75
ns
Notes:
5. Short duration test pulse used to minimize self-heating.



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