APM1402S datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. B.2 - Mar., 2005

www.anpec.com.tw

APM1402S

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±8

ID*

Continuous Drain Current

0.8

IDM*

Pulsed Drain Current

VGS=4.5V

IS*

Diode Continuous Forward Current

0.3

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

0.34

PD*

Maximum Power Dissipation

TA=100°C

0.13

RθJA*

Thermal Resistance-Junction to Ambient

360

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t ≤ 10sec.

APM1402S

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

IDSS

Zero Gate Voltage Drain Current

VDS=16V, VGS=0V

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

0.5

0.75

1.2

IGSS

Gate Leakage Current

VGS=±8V, VDS=0V

±10

µA

VGS=4.5V, IDS=1.2A

190

250

RDS(ON)

Drain-Source On-state Resistance

VGS=2.5V, IDS=0.6A

310

410

Ω

VSD

Diode Forward Voltage

ISD=0.3A, VGS=0V

0.8

1.3

Dynamic Characteristics

Ciss

Input Capacitance

131

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

9.6

Turn-off Fall Time

VDD=15V, RL=15

Ω,

IDS=1A, VGEN=10V,

RG=6

Ω

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