APM2103SG datasheet(2/8 Pages) ANPEC

2 / 8 page

Rev. A.1 - Jun., 2006

APM2103SG

www.anpec.com.tw

Absolute Maximum Ratings

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C Unless Otherwise Noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±12

Continuous Drain Current

-2.5

IDM

300

µs Pulsed Drain Current

VGS=-4.5V

-10

Diode Continuous Forward Current

-1.3

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA =25°C

1.14

Maximum Power Dissipation

TA =100°C

0.45

RθJA

Thermal Resistance-Junction to Ambient

110

°C/W

Notes: *Surface Mounted on 1in

2 pad area, t

≤ 5sec.

APM2103SG

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

-20

VDS=-16V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

µA

VGS(th)

Gate Threshold Voltage

VDS= VGS, IDS=-250µA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±10

µA

VGS=-4.5V, IDS=-2.5A

110

VGS=-2.5V, IDS=-2A

120

160

RDS(ON)

a Drain-Source On-State Resistance

VGS=-1.8V, IDS=-1A

160

260

Ω

VSD

Diode Forward Voltage

ISD=-1.3A, VGS=0V

-0.8

-1.3

Gate Charge Characteristics

Total Gate Charge

5.8

Qgs

Gate-Source Charge

1.3

Qgd

Gate-Drain Charge

VDS=-10V, VGS=-4.5V,

IDS=-2.5A

1.1

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