APM2301CA datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. A.1 - Jun., 2006

APM2301CA

www.anpec.com.tw

Absolute Maximum Ratings

A = 25°C Unless Otherwise Noted)

Electrical Characteristics (T

A = 25°C Unless Otherwise Noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±12

Continuous Drain Current

-2.8

IDM

300

µs Pulsed Drain Current

VGS=-4.5V

-12

Diode Continuous Forward Current

-1.3

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA =25°C

0.83

Maximum Power Dissipation

TA =100°C

0.3

RθJA

Thermal Resistance-Junction to Ambient

150

°C/W

Notes: *Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM2301CA

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

-20

VDS=-16V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

µA

VGS(th)

Gate Threshold Voltage

VDS= VGS, IDS=-250

µA

-0.5

-0.75

-1

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±10

µA

VGS=-4.5V, IDS=-2.8A

VGS=-2.5V, IDS=-2A

115

RDS(ON)

a Drain-Source On-State Resistance

VGS=-1.8V, IDS=-1A

106

165

Ω

VSD

Diode Forward Voltage

ISD=-1.3A, VGS=0V

-0.75

-1.3

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

1.9

Qgd

Gate-Drain Charge

VDS=-10V, VGS=-4.5V,

IDS=-2.8A

1.9

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