TTC017

2

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25 





))))

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

Collector power dissipation

Collector power dissipation

Junction temperature

Storage temperature

(Tc = 25 )

(Note 1)

(Note 1)

(Note 2)

Symbol

VCBO

VCEX

VCEO

VEBO

IC

ICP

IB

PC

PC

Tj

Tstg

Rating

160

160

80

9

3

5

1.5

1.2

12

175

-55 to 150

Unit

V

A

W



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 175 .

Note 2: Merely junction temperature is guaranteed 175 .

Storage temperature range is guaranteed as usual (-55 to 150 ).

5.

5.

5.

5. Electrical Characteristics

Electrical Characteristics

Electrical Characteristics

Electrical Characteristics

5.1.

5.1.

5.1.

5.1. Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25 





))))

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

ICBO

IEBO

V(BR)CEO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)(1)

VCE(sat)(2)

VBE(sat)

Test Condition

VCB = 160 V, IE = 0 A

VEB = 9 V, IC = 0 A

IC = 10 mA, IB = 0 A

VCE = 2 V, IC = 1 mA

VCE = 2 V, IC = 0.5 A

VCE = 2 V, IC = 1 A

IC = 0.5 A, IB = 50 mA

IC = 1 A, IB = 100 mA

IC = 1 A, IB = 100 mA

Min





80

150

180

100







Typ.



















Max

100

100





450



0.3

0.5

1.5

Unit

nA

V



V

2015-03-24

Rev.1.0