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IPF014N08NF2S Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IPF014N08NF2S
Description  StrongIRFETTM 2 Power-Transistor
PDF  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPF014N08NF2S Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
StrongIRFETTM2Power-Transistor
IPF014N08NF2S
Rev.2.0,2022-09-23
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
80
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.2
3.0
3.8
V
VDS=VGS,ID=267µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
1.2
1.5
1.4
1.9
m
Ω
VGS=10V,ID=100A
VGS=6V,ID=50A
Gate resistance
RG
-
1.4
-
Ω
-
Transconductance
1)
gfs
128
-
-
S
|VDS|
≥2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
12000 -
pF
VGS=0V,VDS=40V,f=1MHz
Output capacitance
Coss
-
1900
-
pF
VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance
Crss
-
83
-
pF
VGS=0V,VDS=40V,f=1MHz
Turn-on delay time
td(on)
-
25
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Rise time
tr
-
72
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
72
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Fall time
tf
-
44
-
ns
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
53
-
nC
VDD=40V,ID=100A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
36
-
nC
VDD=40V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
35
-
nC
VDD=40V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
53
-
nC
VDD=40V,ID=100A,VGS=0to10V
Gate charge total
1)
Qg
-
170
255
nC
VDD=40V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.4
-
V
VDD=40V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
147
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
199
-
nC
VDS=40V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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