AP66300

Document number: DS43722 Rev. 2 - 2

8 of 25

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August 2022

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AP66300

Typical Performance Characteristics (AP66300 at TA = +25°C, VIN = 12V, VOUT = 5V, fSW = 500kHz, BOM = Table 1 unless

otherwise specified.) (continued)

Figure 11. Frequency vs. Temperature

Figure 12. IQ vs. Temperature, IOUT = 0A

Figure 13. ISHDN vs. Temperature, IOUT = 0A

Figure 14. Line Regulation

Figure 15. Load Regulation

Figure 16. Power MOSFET RDS(ON) vs. Temperature

0

300

600

900

1,200

1,500

1,800

2,100

2,400

2,700

3,000

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

FS=VCC

Rfs=78.7K

Rfs=825K

25

30

35

40

45

50

55

60

65

70

75

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

0.00

0.80

1.60

2.40

3.20

4.00

4.80

5.60

6.40

7.20

8.00

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

5.00

5.02

5.04

5.06

5.08

5.10

5.12

5.14

5.16

5.18

5.20

5

12

19

26

33

40

47

54

61

VIN (V)

IOUT = 0A

IOUT = 1A

IOUT = 2A

IOUT = 3A

5.10

5.11

5.12

5.13

5.14

5.15

5.16

5.17

5.18

5.19

5.20

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

IOUT (A)

VIN =24V

VIN=36V

VIN=48V

VIN=60V

0

20

40

60

80

100

120

140

160

180

200

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

High-Side MOSFET

Low-Side MOSFET