CMBT3903 datasheet(2/3 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VCB0

max.

60 V

Collector–emitter voltage (open base)

VCE0

max.

40 V

Emitter–base voltage (open collector)

VEB0

max.

6 V

Collector current (d.c.)

max.

200 mA

Total power dissipation

up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150

°C

Junction temperature

max.

150 ° C

THERMAL RESISTANCE

Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter breakdown voltage

IC = 1 mA; lB = 0

V(BR)CEO min.

40 V

Collector–base breakdown voltage

IC = 10µA; IE = 0

V(BR)CBO min.

60 V

Emitter–base breakdown voltage

IE = 10µA; IC = 0

V(BR)EBO min.

6 V

Collector cut–off current

VCE = 30 V; VEB = 3 V

ICEX

max.

50 nA

Output capacitance at f = 1 MHz

IE = 0; VCB = 5 V

max.

4 pF

Input capacitance at f = 1 MHz

IC = 0; VBE = 0,5 V

max.

8 pF

Base current

with reverse biased emitter junction

VEB = 3 V; VCE = 30 V

IBEX

max.

50 nA

Saturation voltages

IC = 10 mA; lB = 1 mA

VCEsat

max.

0.2 V

IC = 50 mA; 1B = 5 mA

VCEsat

max.

0.3 V

IC = 10 mA; lB = 1 mA

VBEsat

min.

0.65 V

max. 0.85 V

IC = 50 mA; lB = 5 mA

VBEsat

max. 0.95 V

CMBT3903

CMBT3904

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