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CMBT5087 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CMBT5087 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMBT5087= 2Q ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) VCBO max. 50 V Collector-emitter voltage (open base) VCEO max. 50 V Emitter-base voltage (open collector) VEBO max. 3 V Collector current IC max. 50 mA Total power dissipation at Tamb = 25°C Ptot* max. 225 mW Junction temperature Tj max. 150 ° C D.C. current gain –IC = 100 µA; VCE = 5 V hFE min. 250 max. 800 Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V fT min. 40 MHz RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO max. 50 V Collector-emitter voltage (open base) VCEO max. 50 V CMBT5087 *FR-5 Board = 1.0 × 0.75 × 0.062 in. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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