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CMBT5401 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CMBT5401
Description  SILICON P-N-P HIGH-VOLTAGE TRANSISTOR
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBT5401 Datasheet(HTML) 1 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON P–N–P HIGH–VOLTAGE TRANSISTOR
P–N–P transistor
Marking
CMBT5401 = 2L
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
–VCBO
max.
160 V
Collector–emitter voltage (open base)
–VCEO
max.
150 V
Collector current
–I C
max.
500 mA
Total power dissipation up to Tamb = 25°C
Ptot
max
250 mW
Collector–emitter saturation voltage
IC = 50 mA; IB = 5 mA
VCEsat
max.
0,5 V
D.C. current gain
IC = 10 mA; VCE = –5 V
hFE
60 to 240
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–VCBO
max.
160 V
Collector–emitter voltage (open base)
–VCEO
max.
150 V
Emitter–base voltage (open collector)
–VEBO
max.
5 V
Collector current
–I C
max.
500 mA
CMBT5401
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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