L6590A datasheet(4/19 Pages) STMICROELECTRONICS

4 / 19 page

L6590A

4/19

ELECTRICAL CHARACTERISTCS (Tj = -25 to 125°C, Vcc = 10V; unless otherwise specified))

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

POWER SECTION

V(BR)DSS Drain Source Voltage

Id < 200 µA; Tj = 25 °C

700

Idss

Off state drain current

Vds = 560V; Tj = 125 °C

200

µA

RDS(on)

Drain-to-Source on resistance

RDS(on) vs. Tj: see fig. 17

Id = 120mA; Tj =25 °C

Ω

Id = 120mA; Tj = 125 °C

PWM CONTROL INPUT

VCOMPH

Vout High

Isource = -0.5mA

3.8

4.5

ICOMP

Source Current

1.5V < VCOMP < 3.5V

-0.5

-1

-2.5

RCOMP

Dynamic Resistance

1.5V < VCOMP < 3.5V

Ω

OSCILLATOR SECTION

Fosc

Oscillator Frequency

Tj =25°C

kHz

Dmin

Min. Duty Cycle

VCOMP =1V

Dmax

Max. Duty Cycle

VCOMP =4V

DEVICE OPERATION SECTION

Iop

Operating Supply Current

fsw = Fosc

4.5

Quiescent Current

MOS disabled

3.5

Icharge

VCC charge Current

Vcc =0V toVccon - 0.5V;

Vds = 100 to 400V; Tj =25°C

-3

-4.5

-7

Vcc =0V toVccon - 0.5V;

Vds = 100 to 400V

-2.5

-4.5

-7.5

VCCclamp VCC Clamp Voltage

Iclamp = 10mA (*)

15.5

16.5

17.5

Vccon

Start Threshold

voltage

(*)

13.5

14.5

15.5

Vccoff

Min operating voltage after Turn

(*)

6.6

7.2

Vdsmin

Drain start voltage

CIRCUIT PROTECTIONS

Ipklim

Pulse-by-pulse Current Limit

di/dt = 120 mA/ µs

550

625

700

VccOVP

Overvoltage Protection

Icc = 10 mA (*)

LEB

Masking Time

After MOSFET turn-on (**)

120

STANDBY SECTION

FSB

Oscillator Frequency

kHz

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