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AS4C4M4F1-50TI Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation

Part # AS4C4M4F1-50TI
Description  5V 4M횞4 CMOS DRAM (Fast Page mode)
PDF  18 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C4M4F1-50TI Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation

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AS4C4M4F0
AS4C4M4F1
4/11/01; v.0.9
Alliance Semiconductor
P. 5 of 18
®
AC parameters common to all waveforms
Read cycle
Symbol
Parameter
-50
-60
Unit
Notes
MinMax
MinMax
tRC
Random read or write cycle time
80
–
100
–
ns
tRP
RAS precharge time
30
–
40
–
ns
tRAS
RAS pulse width
50
10K
60
10K
ns
tCAS
CAS pulse width
8
10K
10
10K
ns
tRCD
RAS to CAS delay time
15
35
15
43
ns
6
tRAD
RAS to column address delay time
12
25
12
30
ns
7
tRSH
CAS to RAS hold time
10
–
10
–
ns
tCSH
RAS to CAS hold time
40
–
50
–
ns
tCRP
CAS to RAS precharge time
5
–
5
–
ns
tASR
Row address setup time
0
–
0
–
ns
tRAH
Row address hold time
8
–
10
–
ns
tT
Transition time (rise and fall)
1
50
1
50
ns
4,5
tREF
Refresh period
–
64
–
64
ms
3
tCP
CAS precharge time
8
–
10
–
ns
tRAL
Column address to RAS lead time
25
–
30
–
ns
tASC
Column address setup time
0
–
0
–
ns
tCAH
Column address hold time
8
10
–
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRAC
Access time from RAS
–
50
–
60
ns
6
tCAC
Access time from CAS
–
12
–
15
ns
6,13
tAA
Access time from address
–
25
–
30
ns
7,13
tRCS
Read command setup time
0
–
0
–
ns
tRCH
Read command hold time to CAS
0–
0
–
ns
9
tRRH
Read command hold time to RAS
0–
0
–
ns
9



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