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AS6C4008 Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS6C4008 Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation |
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1 / 14 page ![]() AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection CONTROL CIRCUIT FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30 mA (TYP.) Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 32-pin 450 mil SOP;32-pin 600 mil P-DIP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA 32-pin 400 mil TSOP-II The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C4008 is well designed for very low power system applications, and particularly well suited for battery back-up non-volatile memory application. The AS6C4008 op erates from a single p ower sup p ly o f 2.7V~ 5.5Vand all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1TYP.) Operating(Icc,TYP.) AS6C4008 -40 ~ +85 ℃ 2.7 ~ 5.5V 55ns 4µA(LL) 30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION** Vcc Vss A0-A18 DECODER 512Kx8 MEMORY ARRAY DQ0-DQ7 I/O DATA CIRCUIT COLUMN I/O CE# WE# OE# Page 1 of 14 AUG/09, v 1.4 Alliance Memory Inc |
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