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MIMXRT8024DAE4A Datasheet(PDF) 21 Page - NXP Semiconductors |
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MIMXRT8024DAE4A Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 103 page ![]() Table 7. Absolute maximum ratings (continued) Parameter Description Symbol Min Max Unit Charge Device Model (CDM) Input/Output Voltage range Vin/Vout -0.5 OVDD + 0.31 V Storage Temperature range TSTORAGE -40 150 o C 1. OVDD is the I/O supply voltage. 4.1.2 Thermal resistance 4.1.2.1 13 x 13 mm thermal resistance Table 8 shows the 13 x 13 mm package thermal resistance data. Table 8. 13 x 13 mm thermal resistance data Rating Board type1 Symbol Value Unit Junction to Ambient Thermal resistance2 JESD51-9, 2s2p RθJA 36 oC/W Junction to Package Top Thermal resistance2 JESD51-9, 2s2p ΨJT 0.5 oC/W 1. Thermal test board meets JEDEC specification for this package (JESD51-9). 2. Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is solely for a thermal performance comparison of one package to another in a standardized specified environment. It is not meant to predict the performance of a package in an application-specific environment. 4.1.3 Operating ranges Table 9 provides the operating ranges of the i.MX RT1060X processors. For details on the chip's power structure, see the "Power Management Unit (PMU)" chapter of the i.MX RT1060X Reference Manual (IMXRT1060XRM). Table 9. Operating ranges Parameter Description Symbol Operating Conditions Min Typ Max1 Unit Comment Run Mode VDD_SOC_IN Overdrive 1.25 — 1.3 V — VDD_SOC_IN M7 core at 528 MHz 1.15 — 1.3 V — M7 core at 132 MHz 1.15 — 1.3 M7 core at 24 MHz 0.925 — 1.3 Table continues on the next page... NXP Semiconductors Electrical Characteristics i.MX RT1060X Crossover Processors for Extended Products , Rev. 1, 06/2022 Data Sheet: Technical Data 21 / 103 |
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