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HTT1132E Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HTT1132E Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 21 page  HTT1132E Rev.1.00, Apr.14.2003, page 3 of 21 Q1 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 16 VIC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µAVCB = 15 V, IE = 0 Collector cutoff current ICEO 0.1 µAVCE = 6V, RBE = infinite Emitter cutoff current IEBO 0.1 µAVEB = 0.8 V, IC = 0 DC current transfer ratio hFE 90 120 140 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.25 0.35 pF VCB = 1 V, f = 1 MHz Emitter ground Collector output capacitance Cob 0.38 pF VCB = 1 V, f = 1 MHz Gain bandwidth product fT 810 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Gain bandwidth product fT 12 GHz VCE = 3V, IC = 15mA, f = 1 GHz Forward transfer coefficient |S21| 2 13 16 dB Noise figure NF 1.0 1.6 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Q2 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 15 VIC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µAVCB = 15 V, IE = 0 Collector cutoff current ICEO 0.1 µAVCE = 6V, RBE = infinite Emitter cutoff current IEBO 0.1 µAVEB = 1.5V, IC = 0 DC current transfer ratio hFE 90 120 140 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.50 0.65 pF VCB = 1 V, f = 1 MHz Emitter ground Collector output capacitance Cob 0.68 pF VCB = 1 V, f = 1 MHz Gain bandwidth product fT 24 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Gain bandwidth product fT 11 GHz VCE =3V, IC = 50mA, f = 1 GHz Forward transfer coefficient |S21| 2 711 dB Noise figure NF 1.7 2.3 dB VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω Noise figure NF 1.1 dB VCE = 1 V, IC = 5 mA, f = 900 MHz |
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