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FDB8453LZ Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # FDB8453LZ
Description  isc N-Channel MOSFETTransistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FDB8453LZ Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  FDB8453LZ Datasheet HTML 1Page - Inchange Semiconductor Company Limited FDB8453LZ Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFETTransistor
FDB8453LZ
FEATURES
·
Drain Current : ID=50A@ TC=25℃
·
Drain Source Voltage
: VDSS=40V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) =7mΩ(Max) @ VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous;@Tc=25℃
50
A
IDM
Drain Current-Single Pulsed
100
A
PD
Total Dissipation
66
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
1.9
℃
/W


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