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STB4NK60ZT4 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STB4NK60ZT4
Description  N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages
PDF  32 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB4NK60ZT4 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
4
A
ID
Drain current (continuous) at TC = 100 °C
2.5
A
IDM (1)
Drain current (pulsed)
16
A
PTOT
Total dissipation at TC = 25 °C
70
W
ESD
Gate-source human body model (C=100 pF, R=1.5 kΩ)
3
kV
dv/dt (2)
Peak diode recovery voltage slope
4.5
V/ns
Tj
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
I2PAK, D2PAK
IPAK, DPAK
Rthj-case
Thermal resistance junction- case
1.79
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
100
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max)
4
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
120
mJ
STB4NK60Z-1, STB4NK60ZT4, STD4NK60Z-1, STD4NK60ZT4
Electrical ratings
DS2818 - Rev 9
page 2/32



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