Characteristics

Z00607

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DocID6629 Rev 9

1

Characteristics

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current

(full sine wave)

SOT-223

Ttab = 85 °C

0.8

A

TO-92

TL = 50 °C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

9

A

F = 60 Hz

t = 16.7 ms

9.5

I²tI²t Value for fusing

tp = 10 ms

0.45

A²s

dI/dt

Critical rate of rise of on-state current IG

= 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 110 °C

20

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 110 °C

1

A

PG(AV)

Average gate power dissipation

Tj = 110 °C

0.1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 110

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

Unit

IGT

(1)

VD = 12 V, RL = 30 Ω

I - II - III

MAX

5

mA

IV

7

VGT

ALL

MAX

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Τj = 110 °Χ

ALL

MIN

0.2

V

IH

(2)

IT = 200 mA

MX.

5

mA

IL

IG = 1.2 IGT

I - III - IV

MAX

10

mA

II

20

dV/dt (2)

VD = 67% VDRM, gate open Τj = 110 °Χ

MIN

10

V/µs

(dV/dt)c (2)

(δς/δτ)χ = 0.35 Α/μσ, Τj = 110 °Χ

MIN

1.5

V/µs

1.

minimum IGT is guaranteed at 5% of IGT max.

2.

for both polarities of A2 referenced to A1.

Table 3. Static characteristics

Symbol

Test Conditions

Value

Unit

VTM

(1)

ITM = 1.1 A

tp = 380 µs

Tj = 25 °C

MAX.

1.5

V

Vto

(1)

Threshold voltage

Tj = 110 °C

MAX.

0.95

V

Rd

(1)

Dynamic resistance

Tj = 110 °C

MAX.

420

m

Ω

IDRM

IRRM

VDRM = VRRM = 600 V

Tj = 25 °C

MAX.

5µA

Tj = 110 °C

0.1

mA

1.

for both polarities of A2 referenced to A1.