1

Characteristics

Table 1. Absolute maximum ratings

Symbol

Parameters

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

SOT-223

Ttab = 90 °C

1

A

TO-92

TL = 50 °C

SMBflat-3L

Ttab = 107 °C

ITSM

Non repetitive surge peak on-state current

(full cycle, Tj initial = 25 °C)

F = 50 Hz

tp = 20 ms

8

A

F = 60 Hz

tp = 16.7 ms

8.5

I2t

I2t value for fusing

tp = 10 ms

0.35

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

20

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

1

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Parameters

Quadrant

Value

Unit

Z01

03

07

09

10

IGT(1)

VD = 12 V, RL = 30 Ω

I - II - III

Max.

3

5

10

25

mA

IV

5

7

10

25

VGT

All

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

All

Min.

0.2

V

IH(2)

IT = 50 mA

Max.

7

10

10

25

mA

IL

IG = 1.2 IGT

I - III - IV

Max.

7

10

15

25

mA

II

Max.

15

20

25

50

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 110 °C

Min.

10

20

50

100

V/µs

(dV/dt)c(2)

(dI/dt)c = 0.44 A/ms, Tj = 110 °C

Min.

0.5

1

2

5

V/µs

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Z01

Characteristics

DS2116 - Rev 11

page 2/16