Z0103MUF datasheet(5/16 Pages) STMICROELECTRONICS

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Figure 5. Relative variation of holding current and

latching current versus junction temperature (typ. values)

I , I [T ] /

H L

j I , I [T =25°C]

H L

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

5 0

7 5

100

125

T (°C)

Figure 6. Relative variation of gate trigger current (IGT)

and voltage (VGT) versus junction temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

5 0

7 5

100

125

Tj(°C)

IGT, V GT[Tj] / IGT, V GT[Tj=25 °C]

IGT Q1-Q2

VGT Q1-Q2-Q3-Q4

IGT Q3

IGT Q4

Figure 7. Surge peak on-state current versus number of

cycles

1 0

100

1000

Number of cycles

Repetitive

= 95 °C

amb

Non repetitive

T initial = 25 °C

(A)

TSM

One cy cle

T = 20 ms

Figure 8. Non-repetitive surge peak on-state current and

corresponding value of I2t sinusoidal pulse width

0. 01

0. 10

1. 00

10. 00

0. 1

1. 0

10. 0

100. 0

t ( ms )

(A), I t (A s )

TSM

I t

dI/dt li mi tation:

20A/µs

T initial = 25°C

ITSM

Figure 9. On-state characteristics (maximum values) (ITM

= f(VTM)

(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

(V)

T = max.

T = 25°C

T =max.

V =0.95 V

R =400 m

Ω

Figure 10. Relative variation of critical rate of decrease of

main current (dI/dt) versus junction temperature

0.1

1 .0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

Z0103

Z0107

Z0110

Z0109

(dI/dt)c [(dV/dt)c] / Specifie d (dI/dt)c

(dV/dt)c (V/µs)

Z01

Characteristics (curves)

DS2116 - Rev 11

page 5/16

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