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BUL741 Datasheet(PDF) 4 Page - STMicroelectronics

Part # BUL741
Description  High voltage fast-switching NPN power transistors
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL741 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
BUL741, BUL741FP
4/12
Doc ID 13406 Rev 3
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
2.1
Typical characteristic
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1050 V
0.2
10
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 400 V
10
250
µA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
15
19
24
V
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤300 µs, duty cycle ≤2 %
Collector-emitter
sustaining voltage (IB = 0)
IC = 10 mA
400
450
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 0.7 A IB = 0.14 A
IC = 2 A
IB = 0.6 A
0.15
0.5
0.5
1.5
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 2 A
IB = 0.6 A
1.1
1.5
V
hFE
DC current gain
IC = 0.1 A
VCE = 5 V
IC = 0.45 A
VCE = 3 V
48
25
70
35
100
50
ts
tf
Resistive load
Storage time
Fall time
VCC = 125 V
IC = 1 A
IB(on) = -IB(off) = 0.2 A
tp = 300 µs VBB(off) = - 5 V
2.5
350
3.5
500
µs
ns
Ear
Repetitive avalanche
energy
L = 2 mH
C = 1.8 nF
VBB(off) = - 5V
5mJ
Figure 2.
Safe operating area
Figure 3.
Derating curve



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