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BUL741 Datasheet(PDF) 4 Page - STMicroelectronics |
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BUL741 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics BUL741, BUL741FP 4/12 Doc ID 13406 Rev 3 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. 2.1 Typical characteristic Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 1050 V 0.2 10 µA ICEO Collector cut-off current (IB = 0) VCE = 400 V 10 250 µA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 1 mA 15 19 24 V VCEO(sus) (1) 1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2 % Collector-emitter sustaining voltage (IB = 0) IC = 10 mA 400 450 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.7 A IB = 0.14 A IC = 2 A IB = 0.6 A 0.15 0.5 0.5 1.5 V V VBE(sat) (1) Base-emitter saturation voltage IC = 2 A IB = 0.6 A 1.1 1.5 V hFE DC current gain IC = 0.1 A VCE = 5 V IC = 0.45 A VCE = 3 V 48 25 70 35 100 50 ts tf Resistive load Storage time Fall time VCC = 125 V IC = 1 A IB(on) = -IB(off) = 0.2 A tp = 300 µs VBB(off) = - 5 V 2.5 350 3.5 500 µs ns Ear Repetitive avalanche energy L = 2 mH C = 1.8 nF VBB(off) = - 5V 5mJ Figure 2. Safe operating area Figure 3. Derating curve |
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