Electrical characteristics

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,

STP3NK80Z

4/29

DocID9565 Rev 7

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V,

TC = 125 °C(1)

50

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 1.25 A

3.8

4.5

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 25 V,

f = 1 MHz

-

485

-

pF

Coss

Output capacitance

-

57

-

pF

Crss

Reverse transfer capacitance

-

11

-

pF

Coss eq(1)

Equivalent output capacitance

VGS = 0 V, VDS = 0 to 640 V

-

22

-

pF

Qg

Total gate charge

VDD = 640 V, ID = 2.5 A,

VGS = 0 to 10 V

(see Figure 17: "Test circuit

for gate charge behavior")

-

19

-

nC

Qgs

Gate-source charge

-

3.2

-

nC

Qgd

Gate-drain charge

-

10.8

-

nC

Notes:

(1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80%

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 1.25 A, RG = 4.7

Ω, VGS =10 V

(see Figure 16: "Test circuit for

resistive load switching times" and

Figure 21: "Switching time

waveform")

-

17

-

ns

tr

Rise time

-

27

-

ns

td(off)

Turn-off delay time

-

36

-

ns

tf

Fall time

-

40

-

ns