100N03 datasheet(2/14 Pages) STMICROELECTRONICS

Part #	100N03

Description	N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 14 page

1 Electrical ratings

STD100N03L - STD100N03L-1

2/14

Electrical ratings

Table 1.

Absolute maximum ratings

Table 2.

Thermal Data

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (VGS = 0)

VGS

Gate-Source Voltage

± 20

ID Note 1

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

IDM Note 2

Drain Current (pulsed)

320

PTOT

Total Dissipation at TC = 25°C

110

Derating Factor

0.73

W/°C

dv/dt Note 3 Peak Diode Recovery Voltage Slope

3.9

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 175

°C

Rthj-case

Thermal Resistance Junction-case Max

1.36

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

°C/W

Maximum Lead Temperature For Soldering

Purpose (for 10sec. 1.6 mm from case)

275

°C

Symbol

Parameter

Value

Unit

IAV

Not-Repetitive Avalanche Current

(pulse width limited by Tj max)

EAS

Single pulsed avalanche Energy

(starting Tj=25°C, ID=IAV, VDD = 24V

500

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