©

1996

DATA SHEET

SILICON TRANSISTOR

2SC1733

DESCRIPTION

The 2SC1733 is an NPN silicon epitaxial dual transistor designed

for use in high-frequency differential amplifier applications. Two

transistor chips equivalent to the 2SC1275 are housed in a package

the same size as TO-18.

FEATURES

High gain bandwidth product: fT = 2 GHz TYP.

Compact package, the same size as TO-18

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

14

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

50

mA

Collector Dissipation

PC

200

mW/unit

Total Power Dissipation

PT

300

mW

Junction Temperature

Tj

200

˚C

Storage Temperature

Tstg

–65 to +200

˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICES

VCE = 15 V, RBE = 0

50

nA

Emitter Cut-off Current

IEBO

VEB = 2.0 V, IC = 0

50

nA

DC Current Gain

hFE

VCE = 10 V, IC = 10 mA

25

80

200

hFE Ratio

hFE1/hFE2

VCE = 10 V, IC = 10 mA*

0.8

1.0

Difference of Base to Emitter Voltage

∆VBE

VCE = 10 V, IC = 10 mA

30

mV

Gain Bandwidth Product

fT

VCE = 10 V, IC = 10 mA

1.5

2.0

GHz

Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

1.1

1.5

pF

*

hFE1 is the smaller hFE value of the 2 transistors.

Document No. P11669EJ1V0DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

PACKAGE DIMENSIONS

(in millimeters)

NPN SILICON EPITAXIAL DUAL TRANSISTOR

FOR DIFFERENTIAL AMPLIFIER

INDUSTRIAL USE

φ

3

2

1

5.84 MAX.

φ 4.95 MAX.

PIN CONNECTIONS

1. 1E

2. 1C

3. 1B

4. 2B

5. 2C

6. 2E

4

5

6

60˚

60˚

1.05

5

2C

2

1C

3

1B

4

2B

1

1E

6

2E