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STP3NK90Z Datasheet(PDF) 1 Page - STMicroelectronics |
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STP3NK90Z Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 24 page ![]() DPAK 1 2 3 TAB TO-220 1 2 3 TO-220FP 1 3 2 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. ID Package STD3NK90ZT4 900 V 4.8 Ω 3 A DPAK STP3NK90Z TO-220 STP3NK90ZFP TO-220FP • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK90ZT4 STP3NK90Z STP3NK90ZFP N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP Datasheet DS2980 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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