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M36W0R5020B0 Datasheet(PDF) 21 Page - STMicroelectronics |
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M36W0R5020B0 Datasheet(HTML) 21 Page - STMicroelectronics |
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21 / 26 page ![]() 21/26 M36W0R5020T0, M36W0R5020B0 Table 10. SRAM Write AC Characteristics Note: 1. Whatever the temperature and voltage, tWLDZ is less than tWHDX. Symbol Alt Parameter M36W0R5020T0, M36W0R5020B0 Unit Min Max tAVAV tWC Write Cycle Time 70 ns tAVE1L, tAVE2H, tAVWL tAVBL tSA Address Valid to Beginning of Write 0 ns tAVWH tAVE1H tAVE2L tAVBH tAW Address Valid to Write Enable High 60 ns tBLWH tBLE1H tBLE2L tBLBH tBW UBS, LBS Valid to End of Write 60 ns tDVE1H, tDVE2L, tDVWH tDVBH tSD Input Valid to End of Write 30 ns tE1HAX, tE2LAX, tWHAX tBHAX tHA End of Write to Address Change 0 ns tE1HDX, tE2LDX, tWHDX tBHDX tHD Data Transition to End of Write 0 ns tE1LE1H, tE2HE2L, tE1LWH tE2HWH tE1LBH, tE2HBH tSCE Chip Enable 1 Low or Chip Enable 2 High to End of Write 60 ns tGHDZ tHZOE Output Enable High to Output Hi-Z 25 ns tWHDZ (1) tLZWE Write Enable High to Input Transition 10 ns tWLDZ (1) tHZWE Write Enable Low to Output Hi-Z 25 ns tWLWH tWLE1H tWLE2L tWLBH tPWE Write Enable Pulse Width 50 ns |
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