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2SC4571 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SC4571
Description  NPN SILICON RF TRANSISTOR
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4571 Datasheet(HTML) 3 Page - Renesas Technology Corp

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DESCRIPTION
The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX.
It is suitable for a high density surface mount assembly since the transistor has been applied super minimold
package.
FEATURES
• High Gain Bandwidth Product
fT = 5.0 GHz TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz
• Low Output Capacitance
Cob = 0.9 pF TYP. @ VCB = 5 V, IE = 0 mA, f = 1 MHz
• 3-pin super minimold Package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4571
50 pcs (Non reel)
2SC4571-T1
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (collector) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3
V
Collector Current
IC
60
mA
Total Power Dissipation
Ptot
Note
120
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
−55 to +125
°C
Note Free air
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4571
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR UHF TUNER OSC/MIX
3-PIN SUPER MINIMOLD
The mark
shows major revised points.
Document No. PU10513EJ01V0DS (1st edition)
(Previous No. P10409EJ2V0DS00)
Date Published October 2004 CP(K)
Printed in Japan
© NEC Compound Semiconductor Devices, Ltd. 1993, 2004



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