© Nexperia B.V. 2017. All rights reserved

2PD601BRL_2PD601BSL

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 28 June 2010

4 of 13

Nexperia

2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa991

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

102

10

103

Zth(j-a)

(K/W)

1

0.75

0.50

0.33

0.20

0.01

0.10

0.05

0.02

0

δ = 1

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current VCB =60V; IE = 0 A

--10

nA

VCB =60V; IE =0A;

Tj = 150 °C

--5

μA

IEBO

emitter-base cut-off current

VEB =5V; IC = 0 A

--10

nA

hFE

DC current gain

VCE =10V;

IC =2mA

210

-

460

hFE group R

210

-

340

hFE group S

290

-

460

VCEsat

collector-emitter saturation

voltage

IC =100 mA;

IB =10mA

[1] -

-

250

mV

fT

transition frequency

VCE =6V;

IC =10mA;

f=100MHz

100

250

-

MHz

Cc

collector capacitance

VCB =10V;

IE =ie =0 A;

f=1MHz

--3

pF