Data Sheet PU10512EJ01V0DS

2

2SC5193

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

−

100

nA

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 3 mA

80

−

160

−

RF Characteristics

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

4.0

4.5

−

GHz

Gain Bandwidth Product (2)

fT

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

−

9.0

−

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 3 mA, f = 2.0 GHz

2.5

3.5

−

dB

Insertion Power Gain (2)

S21e2 VCE = 3 V, IC = 20 mA, f = 2.0 GHz

−

6.5

−

dB

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

−

1.7

2.5

dB

Noise Figure (2)

NF

VCE = 3 V, IC = 7 mA, f = 2.0 GHz

−

1.5

−

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 1 V, IE = 0 mA, f = 1.0 MHz

−

0.75

0.85

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

FB

Marking

T88

hFE Value

80 to 160