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2SC5431 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SC5431 Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 11 page ![]() Data Sheet PU10099EJ01V0DS 2 2SC5431 ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA – – 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 100 nA Collector to Emitter Saturation Voltage VCE (sat) hFE = 10, IC = 5 mA – – 0.5 V DC Current Gain hFE Note 1 VCE = 5 V, IC = 5 mA 60 – 120 – Gain Bandwidth Product fT VCE = 5 V, IC = 5 mA, f = 1 GHz 3.0 4.3 – GHz Insertion Power Gain S21e2 VCE = 5 V, IC = 5 mA, f = 1 GHz 5.0 – – dB Reverse Transfer Capacitance Cre Note 2 VCB = 5 V, IE = 0 mA, f = 1 MHz – 0.6 1.2 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank EB FB Marking TA TB hFE Value 60 to 90 80 to 120 |
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