Data Sheet PU10101EJ01V0DS

2

2SC5433

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

–

–

800

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

–

–

800

nA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 7 mA

80

–

145

–

Gain Bandwidth Product

fT

VCE = 3 V, IC = 7 mA, f = 1 GHz

4.5

7.0

–

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz

10.0

12.0

–

dB

Noise Figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

–

1.4

2.7

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

–

–

0.9

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

EB

FB

Marking

TE

TF

hFE Value

80 to 110

100 to 145