DATA SHEET

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confirm that this is the latest version.

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availability and additional information.

Document No. P15364EJ1V0DS00 (1st edition)

Date Published April 2001 NS CP(K)

Printed in Japan

©

2001

NPN SILICON RF TRANSISTOR

2SC5704

NPN SILICON RF TRANSISTOR FOR

LOW NOISE

⋅⋅⋅⋅ HIGH-GAIN AMPLIFICATION

6-PIN LEAD-LESS MINIMOLD

FEATURES

• Ideal for low noise

⋅ high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz

• 6-pin lead-less minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5704

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5704-T3

10 kpcs/reel

• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

115

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.