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2SC5754 Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # 2SC5754
Description  NPN SILICON RF TRANSISTOR
PDF  15 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5754 Datasheet(HTML) 8 Page - Renesas Technology Corp

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Data Sheet PU10008EJ02V0DS
6
2SC5754
VCE = 3.2 V, f = 0.9 GHz
ICq = 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–15
0
–5
–10
5
10
15
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V, f = 2.4 GHz
ICq = 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–5
10
5
015
20
25
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10
5
0
–5
10
15
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10
5
0
–5
10
15
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10
5
0
–5
10
15
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.6 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10
5
0
–5
10
15
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
Remark The graphs indicate nominal characteristics.



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