DATA SHEET

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this is the latest version.

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representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5801

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

The mark

•

•

•

• shows major revised points.

©

©

©

© NEC Corporation 2001

©

©

©

© NEC Compound Semiconductor Devices 2002

Document No. PU10085EJ02V0DS (2nd edition)

Date Published March 2002 CP(K)

Printed in Japan

FEATURES

• Low phase distortion, low voltage operation

• Ideal for OSC applications

• 3-pin lead-less minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5801

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5801-T3

10 kpcs/reel

• Pin 2 (Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9.0

V

Collector to Emitter Voltage

VCEO

5.5

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

100

mA

Total Power Dissipation

Ptot

Note

140

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.