DYNAMIC CHARACTERISTICS

APT47N65BC3

SINGLE PULSE

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0

0.5

0.1

0.3

0.7

0.9

0.05

UNIT

Amps

Volts

ns

µC

V/ns

MIN

TYP

MAX

47

141

1.2

580

650

23

16.5

6

Symbol

R

θJC

R

θ

JA

MIN

TYP

MAX

0.30

62

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv/

dt

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 300V

ID = 47A @ 25°C

INDUCTIVE SWITCHING

VGS = 13V

VDD = 380V

ID = 47A @ 125°C

RG = 5Ω

INDUCTIVE SWITCHING @ 25°C

VDD = 400V, VGS = 15V

ID = 47A, RG = 5Ω

INDUCTIVE SWITCHING @ 125°C

VDD = 400V VGS = 15V

ID = 47A, RG = 5Ω

MIN

TYP

MAX

6965

8355

2100

2940

85

127

250

375

30

45

105

157

18

36

28

56

295

442

84

168

810

1620

840

1680

1172

1758

985

1970

UNIT

pF

nC

ns

µJ

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A

5 dv

/

dt numbers reflect the limitations of the test circuit rather than the

device itself. I

S = -ID47A ,

di/

dt = 700A/µs VR = VDSS, TJ = 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

7 Repetitve avalanche causes additional power losses that can be

calculated as

PAV=EAR*f

Microsemi Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (V

GS = 0V, IS = -47A)

Reverse Recovery Time (I

S = -47A, dlS/dt = 100A/µs, VR = 350V)

Reverse Recovery Charge (I

S = -47A, dlS/dt = 100A/µs, VR = 350V)

Peak Diode Recovery dv/

dt

5

Peak T J = P DM x Z θJC + TC

Duty Factor D =

t1/t2

t2

t1

Note: