BFS20W datasheet(3/8 Pages) NEXPERIA

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1999 Apr 21

NXP Semiconductors

Product data sheet

NPN medium frequency transistor

BFS20W

FEATURES

• Low current (max. 25 mA)

• Low voltage (max. 20 V).

• Very low feedback capacitance (typ. 350 fF).

APPLICATIONS

• IF and VHF applications in thick and thin-film circuits.

DESCRIPTION

NPN medium frequency transistor in a SOT323 (SC-70)

plastic package.

MARKING

Note

∗ = -: Made in Hong Kong.

∗ = t: Made in Malaysia.

PINNING

TYPE NUMBER

MARKING CODE(1)

BFS20W

∗

DESCRIPTION

base

emitter

collector

Fig.1

Simplified outline (SOT323; SC-70) and

symbol.

handbook, halfpage

MAM062

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

Refer to SOT323 (SC-70) standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

ICM

peak collector current

−

IBM

peak base current

−

200

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

200

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

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