STGWA80H65DFBAG datasheet(2/14 Pages) STMICROELECTRONICS

Part #	STGWA80H65DFBAG

Description	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

2 / 14 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

120(1)

Continuous collector current at TC = 100 °C

ICP(2)

Pulsed collector current (tp = 1 ms)

240

VGE

Gate-emitter voltage

±20

Transient gate-emitter voltage (tp ≤ 10 μs)

±30

Continuous forward current at TC = 25 °C

120(1)

Continuous forward current at TC = 100 °C

IFP(2)

Pulsed forward current

240

PTOT

Total power dissipation at TC = 25 °C

535

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

1. Current limited by package.

2. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case IGBT

0.28

°C/W

Thermal resistance, junction-to-case diode

0.41

RthJA

Thermal resistance, junction-to-ambient

°C/W

STGWA80H65DFBAG

Electrical ratings

DS14160 - Rev 1

page 2/14

STGWA80H65DFBAG Datasheet(PDF) 2 Page - STMicroelectronics

STGWA80H65DFBAG Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL