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STL120N10F8 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STL120N10F8
Description  N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL120N10F8 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings (at TC = 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25 °C
125
A
Drain current (continuous) at TC = 100 °C
88
IDM(1)(2)(3)
Drain current (pulsed), tP = 10 µs
500
A
PTOT
Total power dissipation at TC = 25 °C
150
W
IAS
Single pulse avalanche current (pulse width limited by maximum junction temperature)
60
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = 60 A, RGmin = 25 Ω)
140
mJ
TJ
Operating junction temperature range
-55 to 175
°C
Tstg
Storage temperature range
°C
1. The value is relevant to RthJC. Current limitations will come from the operative conditions, such as temperature and
thermalresistance of the PCB.
2. Pulse width is limited by safe operating area.
3. Specified by design, not tested in production.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJA(1)
Thermal resistance, junction-to-ambient (on 2s2p FR-4 board vertical in still area)
24
°C/W
RthJC
Thermal resistance, junction-to-case
1.0
°C/W
1. Defined according to JEDEC standards (JESD51-5, -7).
STL120N10F8
Electrical ratings
DS13899 - Rev 2
page 2/15



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