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BCV64B

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Product data sheet

Rev. 4 — 2 August 2010

4 of 12

Nexperia

BCV64B

PNP general-purpose double transistor

7.

Characteristics

[1]

Due to matched dies, hFE values for TR2 are the same as for TR1.

[2]

VBEsat decreases by about 1.7 mV/K with increasing temperature.

[3]

VBE decreases by about 2 mV/K with increasing temperature.

Table 8.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base

cut-off current

VCB = −30 V; IE =0A

-

-

−15

nA

VCB = −30 V; IE =0A;

Tj =150 °C

--

−5

μA

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

-

−75

−300

mV

VBEsat

base-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

[2] -

−700

-

mV

Transistor TR1

hFE

DC current gain

VCE = −5V;

IC = −2mA

220

-

475

VCEsat

collector-emitter

saturation voltage

IC = −100 mA;

IB = −5mA

-

−250

−650

mV

VBEsat

base-emitter

saturation voltage

IC = −100 mA;

IB = −5mA

[2] -

−850

-

mV

VBE

base-emitter voltage

IC = −2mA;

VCE = −5V

[3]

−600

−650

−750

mV

IC = −10 mA;

VCE = −5V

[3] --

−820

mV

fT

transition frequency

VCE = −5V;

IC = −10 mA;

f=100MHz

100

-

-

MHz

Cc

collector capacitance

VCB = −10 V;

IE =ie =0A;

f=1MHz

-4

-pF

Transistor TR2

hFE

DC current gain

VCE = −700 mV;

IC = −2mA

[1] 220

-

475

VCEsat

collector-emitter

saturation voltage

IC = −100 mA;

IB = −5mA

-

−250

-

mV

VBE

base-emitter voltage

IC = −2mA;

VCE = −700 mV

[3] -

−700

-

mV