PBLS1502Y_PBLS1502V_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 24 August 2009

3 of 14

NXP Semiconductors

PBLS1502Y; PBLS1502V

15 V PNP BISS loadswitch

5.

Limiting values

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

6.

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Transistor TR1: PNP

VCBO

collector-base voltage

open emitter

-

−15

V

VCEO

collector-emitter voltage

open base

-

−15

V

VEBO

emitter-base voltage

open collector

-

−6V

IC

collector current (DC)

-

−500

mA

ICM

peak collector current

tp ≤ 1 ms; δ≤ 0.02

-

−1A

IB

base current (DC)

-

−50

mA

IBM

peak base current

tp ≤ 1 ms; δ≤ 0.02

-

−100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

200

mW

Transistor TR2: NPN

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+30

V

negative

-

−10

V

IO

output current (DC)

-

100

mA

ICM

peak collector current

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

200

mW

Per device

Ptot

total power dissipation

-

300

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

-

416

K/W

SOT666

[1][2] -

-

416

K/W