PBLS2002S datasheet(10/17 Pages) NEXPERIA

10 / 17 page

PBLS2002S_2

Product data sheet

Rev. 02 — 24 August 2009

9 of 16

NXP Semiconductors

PBLS2002S

20 V PNP BISS loadswitch

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 9.

TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 10. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 11. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa804

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−1

−104

−103

−10

−102

(1)

(2)

(3)

006aaa805

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−1

−104

−103

−10

−102

(1)

(2)

(3)

006aaa806

10−1

RCEsat

(

Ω)

10−2

IC (mA)

−1

−104

−103

−10

−102

(1)

(2)

(3)

006aaa807

IC (mA)

−1

−104

−103

−10

−102

10−1

102

RCEsat

(

Ω)

10−2

(1)

(2)

(3)

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