PBLS4002D_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 5 January 2009

3 of 15

NXP Semiconductors

PBLS4002D

40 V PNP BISS loadswitch

[1]

Device mounted on an FR4 (PCB), single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

250

mW

[2] -

350

mW

[3] -

400

mW

TR2; NPN resistor-equipped transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+30

V

negative

-

−10

V

IO

output current

-

100

mA

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

-

200

mW

Per device

Ptot

total power dissipation

[1] -

400

mW

[2] -

530

mW

[3] -

600

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit